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NVD5803N Power MOSFET
Features
40 V, 85 A, Single N-Channel, DPAK
* * * * *
Low RDS(on) High Current Capability Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
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V(BR)DSS 40 V RDS(on) MAX 5.7 mW @ 10 V ID MAX 85 A
Applications
* DC Motor Drive * Reverse Battery Protection * Glow Plug
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 25C Steady State TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 40 "20 85 61 83 228 -55 to 175 85 240 W A C A mJ 12 Unit V V A G
D
S N-CHANNEL MOSFET 4
tp = 10 ms
3
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
DPAK CASE 369AA (Surface Mount) STYLE 2
TL
260
C
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain YWW V58 03NG 2 1 Drain 3 Gate Source Y WW 5803N G = Year = Work Week = Device Code = Pb-Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 1) Symbol RqJC RqJA Value 1.8 42 Unit C/W
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2010
April, 2010 - Rev. 0
1
Publication Order Number: NVD5803N/D
NVD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A TJ = 25C TJ = 150C VGS = 10 V, VDD = 32 V, ID = 50 A, RG = 2.0 W VGS = 10 V, VDS = 20 V, ID = 50 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V, ID = 50 A VGS = 5.0 V, ID = 30 A Forward Transconductance VDS = 15 V, ID = 15 A CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 12.6 21.4 28.3 6.6 ns 3220 390 270 51 3.8 12.7 12.7 nC pF VGS = 0 V, VDS = 40 V TJ = 25C TJ = 150C VGS = 0 V, ID = 250 mA 40 40 1.0 100 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.5 -7.4 4.9 6.7 13.6
3.5
V mV/C
5.7
mW
S
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 30 A 0.88 0.73 27.2 14 13.2 17 nC ns 1.2 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number NVD5803NT4G Package DPAK (Pb-Free) Shipping 2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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2
NVD5803N
TYPICAL CHARACTERISTICS
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 10 V TJ = 25C ID, DRAIN CURRENT (A) VGS = 5 V 4.8 V 4.6 V 4.4 V 4.2 V 4.0 V 3.8 V 3.6 V 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 160 140 120 100 80 60 40 20 0 2 TJ = 25C TJ = 125C 3 TJ = -55C 4 5 6 VDS 10 V
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.010 ID = 50 A TJ = 25C 0.008 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.008
Figure 2. Transfer Characteristics
TJ = 25C 0.007 VGS = 5 V
0.006
0.006
0.005
VGS = 10 V
0.004
2
4
6
8
10
0.004
5
20
35
50
65
80
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -55 -35 -15 100 ID = 50 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 100000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
1000
TJ = 125C
5
25
45
65
85 105 125 145 165
5
10
15
20
25
30
35
40
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NVD5803N
TYPICAL CHARACTERISTICS
4000 3500 C, CAPACITANCE (pF) 3000 2500 2000 1500 1000 500 0 Crss 0 10 20 30 DRAIN-TO-SOURCE VOLTAGE (V) Coss Ciss VGS = 0 V TJ = 25C 15 12 QT 9 6 3 0 VDS Qgs Qgd VGS 18 12 6 0 55 30 24
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID = 50 A TJ = 25C
40
0
5
10
15
20
25
30
35
40
45
50
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (A) VDD = 32 V ID = 85 A VGS = 10 V 100 t, TIME (ns) td(off) tr 10 tf td(on) 80 70 60 50 40 30 20 10 0 0.4
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
1
1
10 RG, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
1000 VGS = 10 V Single Pulse TC = 25C EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 250
Figure 10. Diode Forward Voltage vs. Current
ID = 85 A 200 150 100 50 0 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C)
ID, DRAIN CURRENT (A)
100
10 ms 100 ms 1 ms 10 ms dc
10
1
0.1 0.1
RDS(on) Limit Thermal Limit Package Limit 1 10
100
Figure 11. Maximum Rated Forward Biased Safe Operating Area
VDS, DRAISN VOLTAGE (V)
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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4
NVD5803N
TYPICAL CHARACTERISTICS
RqJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE
10
1
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10
0.01 0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
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5
NVD5803N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE A
-T- B V R
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 ---
C E
S
A
1 2 3
Z H U
F L D
2 PL
J
DIM A B C D E F H J L R S U V Z
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20 0.244 3.0 0.118
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
2.58 0.101
5.80 0.228
1.6 0.063
6.172 0.243
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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NVD5803N/D

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